advance technical information characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-7097 rev- 9-2001 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 600 73 0.075 100 500 100 35 APT60M75L2LL 600 73 292 30 40 890 7.12 -55 to 150 300 73 50 3200 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 g d s power mos 7 tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 tm by significantly lowering r ds(on) and q g . power mos 7 tm combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. power mos 7 tm ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular to-264 max package to-264 max APT60M75L2LL 600v 73a 0.075 w
dynamic characteristics 050-7097 rev- 9-2001 apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline APT60M75L2LL advance technical information symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 0.6 w min typ max 9580 1710 108 220 51 98 23 19 53 8 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/s) peak diode recovery dv / dt 5 source-drain diode ratings and characteristics unit amps volts ns c v/ns min typ max 73 292 1.3 857 25.9 8 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 1.20mh, r g = 25 w , peak i l = 73a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r q jc r q ja min typ max 0.14 40 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt
|
